JPS6072261A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6072261A
JPS6072261A JP58178074A JP17807483A JPS6072261A JP S6072261 A JPS6072261 A JP S6072261A JP 58178074 A JP58178074 A JP 58178074A JP 17807483 A JP17807483 A JP 17807483A JP S6072261 A JPS6072261 A JP S6072261A
Authority
JP
Japan
Prior art keywords
layer
semiconductor memory
electrode layer
capacitor
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58178074A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04598B2 (en]
Inventor
Hitoshi Hasegawa
長谷川　斉
Kunihiko Wada
邦彦 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58178074A priority Critical patent/JPS6072261A/ja
Publication of JPS6072261A publication Critical patent/JPS6072261A/ja
Publication of JPH04598B2 publication Critical patent/JPH04598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58178074A 1983-09-28 1983-09-28 半導体装置 Granted JPS6072261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58178074A JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58178074A JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS6072261A true JPS6072261A (ja) 1985-04-24
JPH04598B2 JPH04598B2 (en]) 1992-01-08

Family

ID=16042159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58178074A Granted JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS6072261A (en])

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136035A (ja) * 1985-12-10 1987-06-19 Fujitsu Ltd 半導体装置の製造方法
JPH01225149A (ja) * 1988-03-04 1989-09-08 Toshiba Corp キャパシタ及びその製造方法
JPH0260157A (ja) * 1988-08-25 1990-02-28 Nec Corp 半導体装置
JPH0329320A (ja) * 1989-05-30 1991-02-07 Hyundai Electron Ind Co Ltd 半導体素子の食刻バリヤー層を用いたコンタクトホール形成方法
JPH03204969A (ja) * 1989-10-26 1991-09-06 Mitsubishi Electric Corp 半導体装置
US5087951A (en) * 1988-05-02 1992-02-11 Micron Technology Semiconductor memory device transistor and cell structure
JPH0488665A (ja) * 1990-07-31 1992-03-23 Nec Corp 電荷蓄積容量を備えた半導体装置及びその製造方法
US5132240A (en) * 1990-08-03 1992-07-21 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device
US5283453A (en) * 1992-10-02 1994-02-01 International Business Machines Corporation Trench sidewall structure
EP0621632A1 (en) * 1993-04-22 1994-10-26 International Business Machines Corporation Trench capacitor dram
US5396094A (en) * 1990-11-09 1995-03-07 Matsushita Electric Industrial Co. Ltd. Semiconductor memory device with a capacitor having a protection layer
JPH0797008A (ja) * 1993-09-24 1995-04-11 Murata Mach Ltd 物品移載装置
JPH07202019A (ja) * 1993-12-28 1995-08-04 Nec Corp 半導体集積回路装置および製造方法
JPH09283723A (ja) * 1996-04-12 1997-10-31 Lg Semicon Co Ltd 半導体デバイスのキャパシタ構造及び製造方法
KR100269278B1 (ko) * 1992-10-14 2000-10-16 윤종용 강유전체박막을이용한커패시터제조방법
KR20010008432A (ko) * 1998-12-30 2001-02-05 김영환 고유전체 ta２o５막을 갖는 반도체장치의 커패시터 형성방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56147470A (en) * 1980-04-17 1981-11-16 Nec Corp Semiconductor device
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS5810852A (ja) * 1981-07-10 1983-01-21 Fujitsu Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56147470A (en) * 1980-04-17 1981-11-16 Nec Corp Semiconductor device
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS5810852A (ja) * 1981-07-10 1983-01-21 Fujitsu Ltd 半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136035A (ja) * 1985-12-10 1987-06-19 Fujitsu Ltd 半導体装置の製造方法
JPH01225149A (ja) * 1988-03-04 1989-09-08 Toshiba Corp キャパシタ及びその製造方法
US5087951A (en) * 1988-05-02 1992-02-11 Micron Technology Semiconductor memory device transistor and cell structure
JPH0260157A (ja) * 1988-08-25 1990-02-28 Nec Corp 半導体装置
JPH0329320A (ja) * 1989-05-30 1991-02-07 Hyundai Electron Ind Co Ltd 半導体素子の食刻バリヤー層を用いたコンタクトホール形成方法
JPH03204969A (ja) * 1989-10-26 1991-09-06 Mitsubishi Electric Corp 半導体装置
JPH0488665A (ja) * 1990-07-31 1992-03-23 Nec Corp 電荷蓄積容量を備えた半導体装置及びその製造方法
US5132240A (en) * 1990-08-03 1992-07-21 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device
US5396094A (en) * 1990-11-09 1995-03-07 Matsushita Electric Industrial Co. Ltd. Semiconductor memory device with a capacitor having a protection layer
US5283453A (en) * 1992-10-02 1994-02-01 International Business Machines Corporation Trench sidewall structure
KR100269278B1 (ko) * 1992-10-14 2000-10-16 윤종용 강유전체박막을이용한커패시터제조방법
EP0621632A1 (en) * 1993-04-22 1994-10-26 International Business Machines Corporation Trench capacitor dram
JPH0797008A (ja) * 1993-09-24 1995-04-11 Murata Mach Ltd 物品移載装置
JPH07202019A (ja) * 1993-12-28 1995-08-04 Nec Corp 半導体集積回路装置および製造方法
JPH09283723A (ja) * 1996-04-12 1997-10-31 Lg Semicon Co Ltd 半導体デバイスのキャパシタ構造及び製造方法
KR20010008432A (ko) * 1998-12-30 2001-02-05 김영환 고유전체 ta２o５막을 갖는 반도체장치의 커패시터 형성방법

Also Published As

Publication number Publication date
JPH04598B2 (en]) 1992-01-08

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